Features of indirect-band-to-band tunneling in an insulated-gate lateral pn junction device on a SIMOX substrate with an ultrathin 10-nm-thick silicon layer

Abstract
This paper reports the occurrence and nature of negative conductance at temperatures under 100 K in silicon-on-insulator insulated-gate pn-junction devices with a 10-nm-thick silicon layer fabricated on an insulator. Important aspects of indirect tunneling process are characterized using theoretical considerations. A detailed comparison to a device with a 90-nm-thick silicon layer indicates that the strong two-dimensional confinement effect plays an important role, such as a resonant effect between subband levels of p and n regions, in the tunneling property of the device with the 10-nm-thick silicon layer.