J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-117 - Pr9-120
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-117-Pr9-120

DOI: 10.1051/jp4:1998920

Dielectric relaxation phenomena in superparaelectric and ferroelectric ceramic thin films and the relevance with respect to high density DRAM and FRAM applications

M. Schumacher1, S. Manetta2 and R. Waser1

1  Institut für Werkstoffe der Elektrotechnik (IWE), RWTH Aachen University of Technology, 52056 Aachen, Germany
2  Laboratoire de Céramique, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Dielectric relaxation has been observed for a wide variety of materials. Especially for dielectric thin films a typical Curie -von Schweidler relaxation has been observed by rnany groups in the literature. Although some possible reasons for these relaxation phenomena have been discussed, a cornprehensive understanding of the physical origins involved could not be obtained by now. The purpose of this contribution is to present a wide range of experimental results collected on Pb(Zr,Ti)O3 (PZT) thin films. Results are cornpared to investigations on (Ba,Sr)TiO3 and SrTiO3 films.

© EDP Sciences 1998