| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-13 - Pr3-16 | |
| DOI | https://doi.org/10.1051/jp4:1998303 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-13-Pr3-16
DOI: 10.1051/jp4:1998303
1 LPCS/ENSERG, UMR du CNRS/INPG, BP. 257, 38016 Grenoble, France
2 LETI-CEA, DMEL/CENG, 38041 Grenoble, France
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-13-Pr3-16
DOI: 10.1051/jp4:1998303
Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETs
S.H. Renn1, C. Raynaud2 and F. Balestra11 LPCS/ENSERG, UMR du CNRS/INPG, BP. 257, 38016 Grenoble, France
2 LETI-CEA, DMEL/CENG, 38041 Grenoble, France
Abstract
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibond MOSFETs is presented in a wide range of temperature. The variations of the maximal transconductance, threshold voltage and drain current are addressed. Some recovery effects are also outlined for N-channel device.
© EDP Sciences 1998