| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-17 - Pr3-20 | |
| DOI | https://doi.org/10.1051/jp4:1998304 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-17-Pr3-20
DOI: 10.1051/jp4:1998304
Laboratoire de Physique des Composants à Semiconducteurs, UMR du CNRS, ENSERG, BP. 257, 38016 Grenoble, France
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-17-Pr3-20
DOI: 10.1051/jp4:1998304
A thorough analysis of self-heating effects for SOI MOSFETs on SIMOX and UNIBOND substrates
J. Jomaah, E. Rauly, G. Ghibaudo and F. BalestraLaboratoire de Physique des Composants à Semiconducteurs, UMR du CNRS, ENSERG, BP. 257, 38016 Grenoble, France
Abstract
The impact of the self heating effect (SH) on the low temperature operation of MOSFET/SOI is investigated with the help of a simple self heating model. Both the SIMOX and UNIBOND substrates are analyzed. The variation with temperature of the buried oxide thermal conductivity extracted from the thermal resistance is found to be in good agreement with the experimental data for fused silica. The influence of the depletion of the thin Si film is carefully analysed and the existence of an optimum substrate temperature is demonstrated allowing better device performance to be achieved.
© EDP Sciences 1998