| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-77 - C6-82 | |
| DOI | https://doi.org/10.1051/jp4:1991614 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-77-C6-82
DOI: 10.1051/jp4:1991614
1 Laboratoire de Physique des Matériaux, CNRS-Bellevue, 1 Place Aristide-Briand, F-92195 Meudon Cedex, France
2 Laboratoire de Physique des Solides de Bellevue, CNRS-Bellevue, 1 Place Aristide-Briand, F-92195 Meudon Cedex, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-77-C6-82
DOI: 10.1051/jp4:1991614
THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON
J.-L. MAURICE1 and Y. MARFAING21 Laboratoire de Physique des Matériaux, CNRS-Bellevue, 1 Place Aristide-Briand, F-92195 Meudon Cedex, France
2 Laboratoire de Physique des Solides de Bellevue, CNRS-Bellevue, 1 Place Aristide-Briand, F-92195 Meudon Cedex, France
Abstract
The presence of carriers in the grain boundary (GB) space charge is taken into account in solving numerically Poisson's equation. This allows one, by using a schematic description of electron excitation, to investigate the theoretical behaviour of the GB recombination velocity, measured by EBIC, in high injection conditions.
© EDP Sciences 1991