| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | Pr8-1163 - Pr8-1169 | |
| DOI | https://doi.org/10.1051/jp4:19998145 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-1163-Pr8-1169
DOI: 10.1051/jp4:19998145
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, China
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-1163-Pr8-1169
DOI: 10.1051/jp4:19998145
MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor
W.C. Liu, H.J. Pan, S.Y. Cheng, W.C. Wang, J.Y. Chen, S.C. Feng and K.H. YuDepartment of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, China
Abstract
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.
© EDP Sciences 1999