A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W.C. Liu; S.Y. Cheng; H.J. Pan; J.Y. Chen; W.C. Wang; S.C. Feng; K.H. Yu

doi:doi:10.1051/jp4:19998144

Issue		J. Phys. IV France Volume 09, Number PR8, September 1999 Proceedings of the Twelfth European Conference on Chemical Vapour Deposition


Page(s)		Pr8-1155 - Pr8-1161
DOI		https://doi.org/10.1051/jp4:19998144

Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-1155-Pr8-1161
DOI: 10.1051/jp4:19998144

A new In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W.C. Liu, S.Y. Cheng, H.J. Pan, J.Y. Chen, W.C. Wang, S.C. Feng and K.H. Yu

Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, China

Abstract
A new In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.