High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMT's)

W.-C. Liu; K.-W. Lin; K.-H. Yu; W.-L. Chang; C.-C. Cheng; C.-K. Wang; H.-M. Chang

doi:doi:10.1051/jp4:20013118

Numéro		J. Phys. IV France Volume 11, Numéro PR3, Août 2001 Thirteenth European Conference on Chemical Vapor Deposition


Page(s)		Pr3-945 - Pr3-950
DOI		https://doi.org/10.1051/jp4:20013118

Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-945-Pr3-950
DOI: 10.1051/jp4:20013118

High-performance In_0.49Ga_0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMT's)

W.-C. Liu, K.-W. Lin, K.-H. Yu, W.-L. Chang, C.-C. Cheng, C.-K. Wang and H.-M. Chang

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, l University Road, Tainan, Taiwan 70101, Republic of China

Abstract
The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (δ-PHEMT) grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the carrier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1x100 µm² devices, the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double δ-PHEMT, respectively. Meanwhile, the measured f_T and f_max, are 12 (16) GHz and 28.4 (34) GHz, respectively.