| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-225 - C6-230 | |
| DOI | https://doi.org/10.1051/jp4:1991635 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-225-C6-230
DOI: 10.1051/jp4:1991635
1 Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology of Lausanne, CH-1015 Lausanne, Switzerland
2 Department of Physics, University of Trento, I-38050 Povo, Italy
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-225-C6-230
DOI: 10.1051/jp4:1991635
CATHODOLUMINESCENCE AND ELECTRON BEAM INDUCED CURRENT STUDY OF HYDROGEN TREATMENT OF p-n GaAs JUNCTION
D. ARAÚJO1, L. PAVESI2, NGUYEN HONG KY1, J.D. GANIÈRE1 and F.K . REINHART11 Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology of Lausanne, CH-1015 Lausanne, Switzerland
2 Department of Physics, University of Trento, I-38050 Povo, Italy
Abstract
The effects of hydrogen diffusion on p-n GaAs junctions have been studied by electron beam induced current (EBIC) and cathodoluminescence (CL) at room temperature. Hydrogen passivates both the acceptors in the p-side of the junction and the donors in the n-side of the junction. As a consequence the diffusion lengths increase, the surface recombination velocities decrease, and, finally, the CL intensity increases after the hydrogen treatment. The observation of hydrogen effects on both sides of the junction indicates that hydrogen diffuses at least in the neutral charge state. We also observe an electron-beam induced reactivation of the passivated centers after exposition of the sample for some minutes to the electron-beam.
© EDP Sciences 1991