J. Phys. IV France
Volume 132, March 2006
Page(s) 141 - 145
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 141-145

DOI: 10.1051/jp4:2006132028

Formation of nanoclusters containing In and Sb atoms

M. Saito, H. Sasaki, T. Sasaki, M. Mori, T. Tambo and C. Tatsuyama

Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan

It have been reported that in deposition onto the Si(111)-($7\times
7$) reconstruction under suitable conditions resulted in the formation of the ordered In nanocluster array structure. Such ordered array structures of metal nanoclusters are promising materials for an ultra-high density recording and nanocatalysis, etc. In the present report, we deposit Sb onto the In nanocluster array structure on the Si(111)-($7\times
7$) reconstructed surface, and observe clusters containing In and Sb atoms by STM.

© EDP Sciences 2006