10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 147-151
DOI: 10.1051/jp4:2006132029

Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS

B. Künstler-Hourriez^{1, 2}, B. Erné³, F. Lefévre⁴, D. Lorans², B. Canava¹, M. Herlem¹ and A. Etcheberry<sup>1

1</sup>  SAGEM Défense-Sécurité, 70-74 rue de la Tour Billy, 95100 Argenteuil, France
²  Institut Lavoisier-IREM (UMR-CNRS 8637), Université de Versailles, 45 avenue des États Unis, 78035 Versailles, France
³  Physical & Colloid Chemistry, Van't Hoff Laboratory, Utrecht University, Utrecht, The Netherlands
⁴  DGA, 8 Bd. Victor, 75015 Paris, France

Abstract
The surface chemistry of InSb was modified by anodic treatment at different pH. Using a coupled approach based on electrochemical and surface analysis techniques we determined different chemical configurations for the oxidized InSb surface. Sb-rich oxidized surfaces or stoichiometric ones have been obtained.

© EDP Sciences 2006