J. Phys. IV France
Volume 132, March 2006
Page(s) 133 - 136
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 133-136

DOI: 10.1051/jp4:2006132026

Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties

A. Pongrácz0, 1, 2, G. Battistig2, A.L. Tóth2, Zs. Makkai2, Cs. Dücso2, K.V. Josepovits1 and I. Bársony2

1  Budapest University of Technology and Economics, Department of Atomic Physics, Surface Physics Laboratory, 1111 Budapest XI, Budafoki út 8, Hungary
2  Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Science, PO Box 49, 1525 Budapest, Hungary

Different Miller-indices Si crystal planes covered with thermally grown SiO2 layer were heat treated in CO containing ambient for several hours. Our group has been demonstrated that this process resulting nanometre sized SiC crystallites at the Si side of the Si/SiO2 interface. Low voltage scanning electron microscopy was used to obtain information about the microstructure of the system. Size, morphology and nucleation density of the SiC nanocrystals have been found to depend strongly on the orientation of the substrates. Comparing the (110) plane with the other crystal planes the typical grain size is smaller and the nucleation density is one order of magnitude higher.

© EDP Sciences 2006