J. Phys. IV France
Volume 132, March 2006
Page(s) 127 - 132
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 127-132

DOI: 10.1051/jp4:2006132025

Thermal diffusion of indium in perylenetetracarboxylic dianhydride

R. Hudej1 and G. Bratina2

1  ELETTRA and SISSA/ISAS, Via Beirut 2-4, 34014 Trieste, Italy
2  Nova Gorica Polytechnic, Vipavska 13, 5000 Nova Gorica, Slovenia

Current-voltage (I-V) characteristic measurements of Ag/3,4,9,10-Perylenetetracarboxylic Dianhydride/In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point the I-V characteristic changes from rectifying to Ohmic and the current amplitude increases by several orders of magnitude. The synchrotron radiation photoemission investigation of the 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 $\mu $m. The In4PTCDA coordination compound was not observed on the PTCDA surface and it appears to be limited to the region near the In/PTCDA interface [1].

© EDP Sciences 2006