C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 127-132
Thermal diffusion of indium in perylenetetracarboxylic dianhydrideR. Hudej1 and G. Bratina2
1 ELETTRA and SISSA/ISAS, Via Beirut 2-4, 34014 Trieste, Italy
2 Nova Gorica Polytechnic, Vipavska 13, 5000 Nova Gorica, Slovenia
Current-voltage (I-V) characteristic measurements of Ag/3,4,9,10-Perylenetetracarboxylic Dianhydride/In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point the I-V characteristic changes from rectifying to Ohmic and the current amplitude increases by several orders of magnitude. The synchrotron radiation photoemission investigation of the 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 m. The In4PTCDA coordination compound was not observed on the PTCDA surface and it appears to be limited to the region near the In/PTCDA interface .
© EDP Sciences 2006