Numéro |
J. Phys. IV France
Volume 132, March 2006
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Page(s) | 121 - 125 | |
DOI | https://doi.org/10.1051/jp4:2006132024 | |
Publié en ligne | 11 mars 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 121-125
DOI: 10.1051/jp4:2006132024
1 Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
2 Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Distr. 142432, Russia
3 Institute of Solid State Physics, TU Dresden, 01069 Dresden, Germany
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 121-125
DOI: 10.1051/jp4:2006132024
Potassium doped CuPc: Electronic and atomic structure formation
O.V. Molodtsova1, V.Yu. Aristov1, 2, V.M. Zhilin2, D.V. Vyalikh3 and M. Knupfer11 Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
2 Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Distr. 142432, Russia
3 Institute of Solid State Physics, TU Dresden, 01069 Dresden, Germany
Abstract
By means of the high resolution photoemission spectroscopy (valence
band and core level) using synchrotron radiation facility the
electronic structure of potassium doped copper phthalocyanine (CuPc)
was studied. Analysis of the core level spectra allows us to propose
possible lattice sites in which the potassium ions distribute. A
finite electronic density of states at the Fermi level (E
was not found which is in contrast to reports in the literature for
transport and STS measurements.
© EDP Sciences 2006