J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 113 - 116

J. Phys. IV France
12 (2002) Pr3-113
DOI: 10.1051/jp420020047

A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K

T. Lucas and Y. Jin

LPN, CNRS, route de Nozay, 91460 Marcoussis, France

According to the Hooge empirical 1/f formula, a linear relationship between the squared equivalent input 1/f noise voltage and the ratio of drain current over squared transconductance has been developed. Low-power and low-frequency noise pHEMTs with gate lengths of 4 and 1 $\mu$m have been fabricated and characterized at 4.2 K. The obtained noise and DC data are in good agreement with this developed expression when drain biases are fixed in both of quasi-linear and saturation regimes. This relationship provides the possibilities to evaluate the device noise level by its DC parameters and to determine the Hooge coefficient by directly measurable parameters.

© EDP Sciences 2002