| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 11 - 14 | |
| DOI | https://doi.org/10.1051/jp420020027 | |
J. Phys. IV France 12 (2002) Pr3-11
DOI: 10.1051/jp420020027
The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures
F. Dieudonné1, J. Jomaah1, C. Raynaud2 and F. Balestra11 Institut de Microélectronique, Électromagnétisme et Photonique (IMEP), ENSERG, 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France
2 CEA/LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
Abstract
Hot-carrier effects were studied in body-tied Partially Depleted SOI MOSFETs in a wide range of temperature, from 300 K down
to 20 K. Devices under experimental tests were 0.25
m long N-MOSFETs with a 10
m width. In this paper, the role of externally applied body-bias on the hot-carrier induced degradation is further investigated
for five different temperatures. Our devices underwent accelerated electrical stress applying different negative body-biases
as well as drain and front gate biases chosen to obtain reasonable stress duration. The variations of the main electrical
parameters such as the maximal transconductance, the driving current or the threshold voltage are reported.
© EDP Sciences 2002