J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-637 - Pr3-643|
J. Phys. IV France 11 (2001) Pr3-637-Pr3-643
Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonateA.U. Mane, K. Shalini and S.A. Shivashankar
Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
Thin films of cobalt oxide have been deposited on various substrates, such as glass, Si(100). SrTiO3(100), and LaAlO3(100), by low pressure metalorganic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. Films obtained in the temperature range 400-600°C were uniform and highly crystalline having Co3O4 phase as revealed by x-ray diffraction. Under similar conditions of growth, highly oriented thin films of cobalt oxide grow on SrTiO3(100) and LaAlO3(100). The microstructure and the surface morphology of cobalt oxide films on glass, Si(100) and single crystalline substrates, SrTiO3(100) and LaAlO3(l00) were studied by scanning electron microscopy. Optical properties of the films were studied by uv-visible-near IR spectrophotometry.
© EDP Sciences 2001