Recent developments in the area of vertical cavity surface emitting lasers p. Pr2-3 J. Jacquet, P. Salet, A. Plais, F. Brillouet, E. Derouin, L. Goldstein, C. Fortin, F. Gaborit, P. Pagnod, H. Bissessur et al. (4 de plus) DOI: https://doi.org/10.1051/jp4:1999201
Strong coupling regime in semiconductor microcavities p. Pr2-15 J. Bloch, J.Y. Marzin, R. Planel, V. Thierry-Mieg, B. Sermage, I. Abram et J.M. Gérard DOI: https://doi.org/10.1051/jp4:1999202
Reduction of shot-noise in quantum conductors p. Pr2-23 L. Saminadayar, A. Kumar, D.C. Glattli, Y. Jin et B. Etienne DOI: https://doi.org/10.1051/jp4:1999203
GaAs/AlAs lateral superlattices on vicinal surfaces p. Pr2-33 F. Laruelle, F. Lelarge, T. Mélin, F. Petit, A. Cavanna et B. Etienne DOI: https://doi.org/10.1051/jp4:1999204
The quantum confined Pockels effect in GaAs-based multi-quantum wells p. Pr2-37 O. Krebs, P. Voisin, D. Rondi, J.L. Gentner, L. Goldstein et J.C. Harmand DOI: https://doi.org/10.1051/jp4:1999205
Widely tunable 1.55 mm lasers for wavelength division multiplexed optical fibre communications p. Pr2-49 F. Delorme et C. Ougier DOI: https://doi.org/10.1051/jp4:1999206
MMIC technology aboard satellites p. Pr2-59 J.-L. Cazaux, G. Gregoris, J.-L. Muraro, A. Bensoussan et M. Soulard DOI: https://doi.org/10.1051/jp4:1999207
Integrated electroabsorption modulators for high speed transmission at 1.55 mm p. Pr2-69 A. Ramdane, D. Delprat, N. Souli, F. Devaux et A. Ougazzaden DOI: https://doi.org/10.1051/jp4:1999208
New developments in mid-infrared Sb-based lasers p. Pr2-79 A. Joullié DOI: https://doi.org/10.1051/jp4:1999209
GaAs MMICs for cellular and wireless networks base stations p. Pr2-99 E. Delhaye DOI: https://doi.org/10.1051/jp4:1999210
Broadband interface MMICs between microwave and optoelectronics p. Pr2-105 Ph. Duême, M. Schaller, P. Nicole, D. Mathoorasing et C. Kazmierski DOI: https://doi.org/10.1051/jp4:1999211
Techniques de report et d'assemblage hétérogène. Exemples de réalisation, perspectives p. Pr2-113 J.P. Bailbe, A. Val, A. Marty, P. Souverain et J. Tasselli DOI: https://doi.org/10.1051/jp4:1999212
InP-based micro-opto-electro-mechanical systems (MOEMS) p. Pr2-123 J.L. Leclercq, C. Seassal et P. Viktorovitch DOI: https://doi.org/10.1051/jp4:1999213
Nanofabrication at a 10 nm length scale: Limits of lift-off and electroplating transfer processes p. Pr2-133 A.M. Haghiri-Gosnet, C. Vieu, G. Simon, M. Mejias, F. Carcenac et H. Launois DOI: https://doi.org/10.1051/jp4:1999214
Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus p. Pr2-145 F. Mollot, J.-F. Lamin et O. Schuler DOI: https://doi.org/10.1051/jp4:1999215
III-V devices for applications at millimeter and submillimeter wavelengths p. Pr2-151 O. Vanbésien, G. Beaudin et J.C. Pernot DOI: https://doi.org/10.1051/jp4:1999216
Quantum fountain infrared light sources based on intersubband emissions in quantum wells p. Pr2-161 F.H. Julien, P. Boucaud, S. Sauvage, O. Gauthier-Lafaye et Z. Moussa DOI: https://doi.org/10.1051/jp4:1999217
