| Numéro |
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-265 - Pr9-268 | |
| DOI | https://doi.org/10.1051/jp4:1998952 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-265-Pr9-268
DOI: 10.1051/jp4:1998952
1 Department of Condensed Matter Physics, Royal Institute of Technology, 10044 Stockholm, Sweden
2 Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-265-Pr9-268
DOI: 10.1051/jp4:1998952
Electrical properties of ferroelectric PZT films irradiated by oxygen ions
L. Zheng1, 2, C. Lin2 and K.V. Rao11 Department of Condensed Matter Physics, Royal Institute of Technology, 10044 Stockholm, Sweden
2 Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Abstract
In this paper, ferroelectric and fatigue properties of PZT films irradiated by oxygen ions have been studied. The implantation suppresses the remanent polarization of the film because of the induced charges and displacement damage, but it can be recovered after post annealing. Fatigue measurement shows that the polarization of film is rather stable along the switching cycles when the sample is implanted with 5 x 1012/cm2 to 2x1013/cm2 O+ ions, while it decreases after post annealing. We interpret such a fatigue behavior to arise from oxygen vacancy compensation.
© EDP Sciences 1998