J. Phys. IV France
Volume 08, Numéro PR9, December 19982nd European Meeting on Integrated Ferroelectrics
|Page(s)||Pr9-255 - Pr9-260|
J. Phys. IV France 08 (1998) Pr9-255-Pr9-260
Electrical properties of ferroelectric SrBi2Ta2O9 thin films deposited on MOCVD-Pt/SiO2/Si substrates by plasma-enhanced metalorganic chemical vapor depositionN.-J. Seong and S.-G. Yoon
Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejin 305-764, Korea
The SrBi2Ta2O9 thin films were prepared on MOCVD-Pt/SiO2/Si substrates at 550°C by plasma-enhanced metalorganic chemical vapor deposition. Platinum bottom films deposited by metalorganic chemical vapor deposition (MOCVD) showed a dense and stable state after deposition of SBT films and grains of SBT films show a rectangular shape. The SBT ferroelectric capacitor shows practically no polarization fatigue after the sarnple was switched up to 7.0 x 109 cycles. The retention characteristics of the SBT films looked very promising up to 105 sec and the charge loss for 10 years was estimated to be 10% at room temperature. The leakage current density of the SBT films was about 4 x 10-7 A/cm2 at an applied electric field of 250 kV/cm. The leakage current behavior of SBT films was controlled by a Schottky emission and the schottky barrier height of SBT films was about 0.8 eV.
© EDP Sciences 1998