J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-255 - Pr9-260
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-255-Pr9-260

DOI: 10.1051/jp4:1998950

Electrical properties of ferroelectric SrBi2Ta2O9 thin films deposited on MOCVD-Pt/SiO2/Si substrates by plasma-enhanced metalorganic chemical vapor deposition

N.-J. Seong and S.-G. Yoon

Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejin 305-764, Korea

The SrBi2Ta2O9 thin films were prepared on MOCVD-Pt/SiO2/Si substrates at 550°C by plasma-enhanced metalorganic chemical vapor deposition. Platinum bottom films deposited by metalorganic chemical vapor deposition (MOCVD) showed a dense and stable state after deposition of SBT films and grains of SBT films show a rectangular shape. The SBT ferroelectric capacitor shows practically no polarization fatigue after the sarnple was switched up to 7.0 x 109 cycles. The retention characteristics of the SBT films looked very promising up to 105 sec and the charge loss for 10 years was estimated to be 10% at room temperature. The leakage current density of the SBT films was about 4 x 10-7 A/cm2 at an applied electric field of 250 kV/cm. The leakage current behavior of SBT films was controlled by a Schottky emission and the schottky barrier height of SBT films was about 0.8 eV.

© EDP Sciences 1998