J. Phys. IV France
Volume 08, Numéro PR9, December 19982nd European Meeting on Integrated Ferroelectrics
|Page(s)||Pr9-251 - Pr9-254|
J. Phys. IV France 08 (1998) Pr9-251-Pr9-254
Large area pulsed laser deposited ferroelectric thin films of epitaxial Bi-layered perovskites on siliconA. Pignolet, C. Curran, S. Welke, M. Alexe, S. Senz, D. Hesse and U. Gösele
Max-Planck-lnstitut für Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale, Germany
Ferroelectric thin films of Bi4Ti3O12 and SrBi2Ta2O9, have been deposited on substrates up to 3 inches in diameter by the so-called off-axis Pulsed Laser Deposition technique. In order to promote epitaxial growth, the Bi4Ti3O12 and SrBi2Ta2O9 thin films have been deposited onto epitaxial thin film templates of CeO2/YSZ and on the conductive oxide (La1-xSrx)CoO3 (LSCO) al1 deposited by off-axis PLD. The thickness and composition uniformity of the ferroelectric films, electrodes and buffer layers are important parameters with regard to their possible application. The thickness uniformities achieved are in the range of 5 % to 15% of the mean thickness.
© EDP Sciences 1998