Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channel

A.A. Frantsuzov; A.V. Kharin

doi:doi:10.1051/jp4:1998310

Numéro		J. Phys. IV France Volume 08, Numéro PR3, June 1998 Proceedings of the 3^rd European Workshop on Low Temperature Electronics WOLTE 3


Page(s)		Pr3-41 - Pr3-44
DOI		https://doi.org/10.1051/jp4:1998310

Proceedings of the 3^rd European Workshop on Low Temperature Electronics
WOLTE 3

J. Phys. IV France 08 (1998) Pr3-41-Pr3-44
DOI: 10.1051/jp4:1998310

Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channel

A.A. Frantsuzov and A.V. Kharin

Institute of Semiconductor Physics, Lavrentyeva Prosp. 13, Novosibirsk 630090, Russia

Abstract
Donor ionization in the substrate of p-channel metal-oxide-silicon transistor was investigated, giving rise to a space charge region and to transistor threshold. Measurements were carried out in the temperature range from 4.2 to 8 K and at low magnitudes of longitudinal electric fields in the transistor channel between 500 and 2000 V/cm. It has been shown, that at such conditions the donor ionization in the substrate is caused by photon emission from the transistor channel.