| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-37 - Pr3-40 | |
| DOI | https://doi.org/10.1051/jp4:1998309 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-37-Pr3-40
DOI: 10.1051/jp4:1998309
1 LPCS, UMR du CNRS, ENSERG-INPG, BP. 257, 38016 Grenoble, France
2 France Telecom, CNET Grenoble, BP. 98, 38243 Meylan, France
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-37-Pr3-40
DOI: 10.1051/jp4:1998309
Cryogenic operation of heavy ion implanted N- and P-channel MOSFETs
B. Szelag1, T. Skotnicki2 and F. Balestra11 LPCS, UMR du CNRS, ENSERG-INPG, BP. 257, 38016 Grenoble, France
2 France Telecom, CNET Grenoble, BP. 98, 38243 Meylan, France
Abstract
The low temperature operation of heavy ion implanted P- and N-channel MOSFETs is investigated. The behaviors of the transconductance, transfer and output characteristics, short channel and hot carrier effects as well as parasitic phenomena are thoroughly analyzed for deep submicron devices.
© EDP Sciences 1998