| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-33 - Pr3-35 | |
| DOI | https://doi.org/10.1051/jp4:1998308 | |
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-33-Pr3-35
DOI: 10.1051/jp4:1998308
The drain-bias-variable characteristics of exponent γon l/fγ noise in DDD n-MOSFETs at 77 K and 300 K
S.-L. Chen1 and S.-H. Chen21 Department of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan
2 Department of Fab 2BE1, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
Abstract
The flicker noise (l/fγ) of short-channel MOSFETs measured under different drain bias conditions at 77K and 300K will be presented in this paper, i.e., the drain bias and temperature dependences of the exponent γ on l/fγ noise in DDD n-MOSFETs were studied in the ohmic region. The results showed that γ in the drain-to-source voltage noise spectrum Svd were increased significant with Vds for L = 1.2 µm at 77K and 300K. In other channel lengths, such as L= 1.6, 2.0, and 5.0µm, constant values of γ in the noise spectrum Svd were observed. The threshold voltage Vth, decreased notably with Vds for L= 1.2 µm samples at 77K and 300K. These phenomena imply that the threshold voltage shift has predominant effect on the exponent γ of the Svd flicker noise as the drain voltage and temperature varies.
© EDP Sciences 1998