J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-553 - C5-556|
J. Phys. IV France 05 (1995) C5-553-C5-556
CVD Synthesis of HTSC Films Using Volatile Coordination CompoundsS.V. Volkov, V.Y. Zub, O.N. Balakshina and E.A. Mazurenko
Institute of General and Inorganic Chemistry of National Academy of Sciences of Ukraine 32/34, Palladina prosp., Kiev-142, UA-252142, Ukraine
Thin HTSC films of YBa2Cu3O7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'- dipyridyl as precursors. In-situ films were deposited in N2 and O2 gas reactant mixture reduced substrate temperatures. HTSC films prepared on SrTiO3, ZrO2(Y) and MgO substrates have rather high electric characteristics (e.g. jc ≈ 104 - 105). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed.
© EDP Sciences 1995