Numéro
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-439 - C5-447
DOI https://doi.org/10.1051/jphyscol:1995551
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-439-C5-447

DOI: 10.1051/jphyscol:1995551

Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film

G. Garcia1, J. Casado1, J. Llibre1, M. Doudkowski2, J. Santiso2, A. Figueras2, S. Schamm3, D. Dorignac3, Ch. Grigis3 and M. Aguilò4

1  S.E. Carburos Metàlicos, P° Zona Franca 14-20, 08038 Barcelona, Spain
2  ICMAB/CSIC, Campus U.A.B., 08193 Bellaterra, Spain
3  CEMES-LOE/CNRS, 29 rue Jeanne Marvig, BP. 4347, 31055 Toulouse, France
4  Universitat Rovira i Virgili, Pl Imperial Tarraco, 43000 Tarragona, Spain


Abstract
YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an inplane texture defined by the following relationships : (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers.



© EDP Sciences 1995