| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
|
|---|---|---|
| Page(s) | C7-155 - C7-158 | |
| DOI | https://doi.org/10.1051/jp4:1994737 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-155-C7-158
DOI: 10.1051/jp4:1994737
Laboratoire d'Instrumentation, Université Pierre et Marie Curie, ESPCI, 10 rue Vauquelin, 75005 Paris, France
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-155-C7-158
DOI: 10.1051/jp4:1994737
Non linear recombination processes : application to quantitative implantation characterization
B.C. Forget, D. Fournier and V.E. GusevLaboratoire d'Instrumentation, Université Pierre et Marie Curie, ESPCI, 10 rue Vauquelin, 75005 Paris, France
Abstract
Previous photoreflectance studies on intrinsic silicon have exposed the strong non linearities versus excitation power. Implanted silicon samples however, exhibit these non linearities. We present a non linear model based on Auger recombination that can explain the observed signal for both intrinsic and implanted samples.
© EDP Sciences 1994