| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-159 - C7-162 | |
| DOI | https://doi.org/10.1051/jp4:1994738 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-159-C7-162
DOI: 10.1051/jp4:1994738
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-159-C7-162
DOI: 10.1051/jp4:1994738
Transient reflecting grating study of ion-implanted semiconductors
A. Harata, H. Nishimura, Q. Shen, T. Tanaka and T. SawadaDepartment of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Abstract
Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV ; dose, 1011 - 1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).
© EDP Sciences 1994