| Numéro |
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
|
|
|---|---|---|
| Page(s) | C5-327 - C5-330 | |
| DOI | https://doi.org/10.1051/jp4:1993567 | |
Third International Conference on Optics of Excitons in Confined
Le Journal de Physique IV 03 (1993) C5-327-C5-330
DOI: 10.1051/jp4:1993567
1 Department of Physics, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
2 BNR Europe Ltd., London Road, Harlow, Essex CM17 9NA, U.K.
© EDP Sciences 1993
Le Journal de Physique IV 03 (1993) C5-327-C5-330
DOI: 10.1051/jp4:1993567
Band offsets in strained InGaAsP/InGaAsP quantum well optical modulator structures
R.W. MARTIN1, S.L. WONG1, R.J. NICHOLAS1, A. SMITH2, M.A. GIBBON2, E.J. THRUSH2 and J.P. STAGG21 Department of Physics, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
2 BNR Europe Ltd., London Road, Harlow, Essex CM17 9NA, U.K.
Abstract
Magneto-absorption experiments on a range on In1-xGaxAsyP1-y/InGaAsP multi-quantum well (MQW) structures, including both tensile and compressive strained wells, are presented. Estimates for the band offsets are made in a lattice matched and a strain-balanced structure, and a model to predict the band offsets as a function of strain in InGaAsP heterostructures is described.
© EDP Sciences 1993