| Numéro |
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C3-361 - C3-366 | |
| DOI | https://doi.org/10.1051/jp4:1993349 | |
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
J. Phys. IV France 03 (1993) C3-361-C3-366
DOI: 10.1051/jp4:1993349
Chemistry Department, Moscow State University, 119899, Moscow V-234, Russia
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C3-361-C3-366
DOI: 10.1051/jp4:1993349
Effect of CVD process parameters on phase and chemical composition of BSCCO thin films
V.N. FUFLYIGIN, A.R. KAUL and S.A. POZIGUNChemistry Department, Moscow State University, 119899, Moscow V-234, Russia
Abstract
Superconducting BSCCO thin films were obtained with high deposition rate (about 35 nm/min) at temperatures of 720-810°C by MOCVD-technique. Characteristics of evaporation process of precursors were determined. The influence of deposition temperature and oxygen partial pressure on superconducting phase formation and chemical composition of the films was studied.
© EDP Sciences 1993