| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-325 - C6-333 | |
| DOI | https://doi.org/10.1051/jp4:1991648 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-325-C6-333
DOI: 10.1051/jp4:1991648
IBM Research Division, Zurich Research Laboratory, Säumerstr. 4 , CH-8803 Rüschlikon, Switzerland
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-325-C6-333
DOI: 10.1051/jp4:1991648
LIMITATIONS AND FURTHER DEVELOPMENT OF BEAM INJECTION METHODS. A SYNTHESIS
A. JAKUBOWICZIBM Research Division, Zurich Research Laboratory, Säumerstr. 4 , CH-8803 Rüschlikon, Switzerland
Abstract
This paper gives a critical survey of the state of the art in the field of beam injection assessment of defects in semiconductors. It concentrates on recent developments, trends and current problems. A few statistical figures illustrate the development of this field in the past decade. The problems of spatial resolution and quantification of defect analyses are addressed. The paper closes with speculation as to further developments.
© EDP Sciences 1991