| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-343 - C6-348 | |
| DOI | https://doi.org/10.1051/jp4:1991651 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-343-C6-348
DOI: 10.1051/jp4:1991651
1 Institute of Solid State Physics and Electron Microscopy, Weinberg 2, D-4050 Halle/S., Germany
2 Raith GmbH, Emil-Figge-Strasse 76, D-4600 Dortmund 50, Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-343-C6-348
DOI: 10.1051/jp4:1991651
A NOVEL COMMERCIAL SCANNING-DLTS EQUIPMENT
O. BREITENSTEIN1 and H. RAITH21 Institute of Solid State Physics and Electron Microscopy, Weinberg 2, D-4050 Halle/S., Germany
2 Raith GmbH, Emil-Figge-Strasse 76, D-4600 Dortmund 50, Germany
Abstract
A highly sensitive PC-controlled SDLTS-equipment is introduced, which enables Capacitance- and Current-SDLTS, double-pulse SDLTS, standard-DLTS, and EBIC-imaging to be carried out. The comprehensive "Windows-like" operation software supports a time-efficient measurement process. This system fits to any SEM and represents a valuable supplement e.g. to CL or scanning-PL techniques. Its availability now renders this promising technique accessible also to laboratories not engaged in developing such sophisticated characterization techniques.
© EDP Sciences 1991