| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-271 - C6-275 | |
| DOI | https://doi.org/10.1051/jp4:1991641 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-271-C6-275
DOI: 10.1051/jp4:1991641
IBM Research Division, Zurich Research Laboratory, Säumerstr. 4, CH-8803 Rüschlikon, Switzerland
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-271-C6-275
DOI: 10.1051/jp4:1991641
HIGH RESOLUTION ELECTRON BEAM INJECTION IN SEMICONDUCTORS USING A SCANNING TUNNELING MICROSCOPE
S.F. ALVARADO, Ph. RENAUD and H.P. MEIERIBM Research Division, Zurich Research Laboratory, Säumerstr. 4, CH-8803 Rüschlikon, Switzerland
Abstract
The tip of a scanning tunneling microscope is used as a source of ultralow-energy electrons to excite luminescence in model AlGaAs/GaAs(001) heterostructures. This beam injection technique has the advantage of providing a nanometer-sized charge generation volume. We demonstrate the application of this technique to determine minority charge carrier transport parameters such as the thermalization length of hot electrons and the diffusion length of minority electrons.
© EDP Sciences 1991