| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-173 - C6-179 | |
| DOI | https://doi.org/10.1051/jp4:1991626 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-173-C6-179
DOI: 10.1051/jp4:1991626
Institut für Halbleiterphysik, PF 409, D-1200 Frankfurt (Oder), Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-173-C6-179
DOI: 10.1051/jp4:1991626
CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC
M. KITTLER, J. LÄRZ, G. MORGENSTERN and W. SEIFERTInstitut für Halbleiterphysik, PF 409, D-1200 Frankfurt (Oder), Germany
Abstract
The paper presents diffusion-length and contrast data for large-grained polycrystalline silicon. Rapid thermal annealing was observed to improve the material quality whereas conventional annealing in evacuated quartz ampoules made the material worse. Evidence for significant potential barriers and conduction at certain grain boundaries and for gettering action of defects was found.
© EDP Sciences 1991