EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS

Abstract
The experimental requirements for relating EBIC contrast measurements to the recombination strength of defects in non-ideal specimens is discussed. Three criteria are given which must be met for such an interpretation of measurements to be made. In the second part of the paper the mechanism for recombination at dislocations in silicon is described together with experimental results from clean and decorated dislocations. Details are given of those situations in which copper contamination does not increase dislocation activity. Finally work on decorated stacking faults in silicon is presented.