| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 221 - 224 | |
| DOI | https://doi.org/10.1051/jp4:2006132042 | |
| Published online | 11 March 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 221-224
DOI: 10.1051/jp4:2006132042
Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 221-224
DOI: 10.1051/jp4:2006132042
Formation of planar defects during the initial growth of M-plane GaN on LiAlO2(100)
A. Trampert, T.Y. Liu, O. Brandt and K.H. PloogPaul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Abstract
We have investigated by transmission electron microscopy the
structure and morphology of hexagonal GaN on tetragonal LiAlO2
(100) during the initial stages of growth. Nucleation layers are
grown by molecular beam epitaxy. The ex-situ study of the
three-dimensional GaN nucleation and island coalescence reveals that
planar defects, which are developed in any M-plane GaN film, are the
result of the specific substrate surface morphology, and are thus
growth-induced and not caused by strain relief due to the lattice
mismatch.
© EDP Sciences 2006