| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 225 - 229 | |
| DOI | https://doi.org/10.1051/jp4:2006132043 | |
| Published online | 11 March 2006 | |
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 225-229
DOI: 10.1051/jp4:2006132043
Interface formation and structural properties of iron films on Al0.48 In0.52As(001)
P. Schieffer, N. Tournerie, B. Lépine, C. Lallaizon, A. Guivarc'h and G. JézéquelUniversité de Rennes 1, Équipe de Physique des Surfaces et Interfaces, UMR CNRS-Université 6627 PALMS, Bât. 11C, Campus de Beaulieu, 35042 Rennes, France
Abstract
Using reflection high-energy electron diffraction as well as
ultraviolet and X-ray photoemission spectroscopy we have
investigated the growth of epitaxial Fe ultrathin films onto
Al0.48In0.52(001)-(
) surface. The Fe films grow
in a body centered cubic (bcc) structure with epitaxial relationship
Fe(001)<100>//Al0.48In0.52As(001)<100>. The
analysis of the photoemission data demonstrates that Fe atoms react
with the Al0.48In0.52As substrate. In and As atoms,
liberated during the first stage of the growth, tend to segregate at
the films surface while reacting Al atoms are accommodated in an
interfacial alloy. The Fermi level pinning position at the
Fe/Al0.48In0.52As(001) interface, determined from the
photoemission results, is found 0.76 +/- 0.08 eV below the
conduction band minimum.
© EDP Sciences 2006