J. Phys. IV France
Volume 132, March 2006
Page(s) 221 - 224
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 221-224

DOI: 10.1051/jp4:2006132042

Formation of planar defects during the initial growth of M-plane GaN on LiAlO2(100)

A. Trampert, T.Y. Liu, O. Brandt and K.H. Ploog

Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany

We have investigated by transmission electron microscopy the structure and morphology of hexagonal GaN on tetragonal LiAlO2 (100) during the initial stages of growth. Nucleation layers are grown by molecular beam epitaxy. The ex-situ study of the three-dimensional GaN nucleation and island coalescence reveals that planar defects, which are developed in any M-plane GaN film, are the result of the specific substrate surface morphology, and are thus growth-induced and not caused by strain relief due to the lattice mismatch.

© EDP Sciences 2006