Issue |
J. Phys. IV France
Volume 104, March 2003
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Page(s) | 467 - 470 | |
DOI | https://doi.org/10.1051/jp4:20030124 |
J. Phys. IV France 104 (2003) 467
DOI: 10.1051/jp4:20030124
Electronic structure of aligned carbon nanotubes studied by scanning photoelectron microscopy
I.-H. Hong1, J.W. Chiou2, S.-C. Wang1, R. Klauser1, W.F. Pong2, L.C. Chen3 and T.J. Chuang31 Synchrotron Radiation Research Center, No. 1 R&D Road VI, Hsinchu 300, Taiwan
2 Department of Physics, Tamkang University, Tamsui 251, Taiwan
3 Center for Condensed Matter Sciences, National Taiwan University, Roosevelt Road, Sec. 4, No. 1, Taipei 10764, Taiwan
Abstract
We have investigated the local electronic structures from tip and sidewall regions of aligned multi-walled
carbon nanotubes (MWCNTs) by employing scanning photoelectron microscopy (SPEM) and micro-photoemission
spectroscopy. Spatially resolved spectra of C 1s, Si 2p and valence band have been measured. In particular, we
compared the results from MWCNTs grown on Fe thin film catalyst with those using Ti catalyst, where the quality
of alignment is much lower. For Fe catalyst, the SPEM data show that the tips have a larger density of states (DOS)
and a higher C 1s binding energy than those of the sidewalls. In the case of Ti catalyst, Si 2p signal is detected
within the CNT bundles. Different Si species can be identified. It is suggested that during the plasma-enhanced
growth process, Si is transported into the CNT layer.
© EDP Sciences 2003