Issue |
J. Phys. IV France
Volume 104, March 2003
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Page(s) | 263 - 266 | |
DOI | https://doi.org/10.1051/jp4:200300076 |
J. Phys. IV France 104 (2003) 263
DOI: 10.1051/jp4:200300076
Diffraction limited, EUV interference microscope with long working distance, using one spherical off-axis mirror and a Fresnel bimirror interferometer
D. Joyeux1, D. Phalippou1, R. Mercier1, M. Mullot1, M. Lamare1, A. Klisnick2, D. Ros2 and O. Guilbaud21 LCF-Institut d'Optique, UMR 8501, Campus d'Orsay, bâtiment 503, 91404 Orsay, France
2 LIXAM, UMR 8624, Campus d'Orsay, bâtiment 350, 91404 Orsay, France
Abstract
In some applications, microimaging in EUV requires a long working distance, i.e. a long distance
between the object plane and the first optical surface. This is in particular the case when imaging hot plasmas, such
as those produced by high energy pulsed lasers focused onto solid targets for X-ray laser production or plasma
fusion studies. In this context, a working distance of several 10's cm is required, which makes even the usual
Schwarzschild configurations not convenient. Other major requirements are a high resolution and phase detection
capability, in order to allow a direct detection of the plasma density. The field should be millimetric. A System was
build for diffraction limited (resolution 1
m) interferometric imaging at
nm, using an X-ray laser source.
This System was first tested on a synchrotron beamline (LURE, Orsay). Also, the imaging part was used to obtain
high resolution images of the lasing emission provided by a Ni-like, picosecond Ag plasma, at
nm. Such a
System might be useful in other applications, e.g. phase-sensitive micro-inspection of reflecting surfaces in the field
of EUV lithography.
© EDP Sciences 2003