| Issue |
J. Phys. IV France
Volume 104, March 2003
|
|
|---|---|---|
| Page(s) | 259 - 262 | |
| DOI | https://doi.org/10.1051/jp4:200300075 | |
J. Phys. IV France 104 (2003) 259
DOI: 10.1051/jp4:200300075
Wide range reflection multilayer in 200-25 nm region for Schwarzschild objectives
T. Ejima, K. Sudo, T. Hatano and M. WatanabeInstitute of Multidisciplinaly Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Abstract
Preliminary results of a wide range reflection multilayer in a range from 200 nm to 25 nm (6 eV to 50 eV) for normal incidence
are reported. The structure of the multilayer is [SiC (6.0 nm)] (top single layer)/ [ Y
2O
3 (5.0 nm)/Mg (12.5 nm)/Y
2O
3 (3.3 nm)/Mg (10.0 nm)] (middle-aperiodic-layers)/ [ Y
2O
3 (3.0 nm)/Mg (9.9 nm)]
l5
(piled-double-layers). Its normal incidence reflectance was more than 0.25 in 220-115 nm region and more than
0.04 in 34-24 nm region.
© EDP Sciences 2003