J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-149 - Pr3-154
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-149-Pr3-154

DOI: 10.1051/jp4:2001318

Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O3, TMB, TMPi : Determination of a chemical mechanism

J.-P. Nieto1, B. Caussat1, J.-P. Couderc1, I. Orain2 and L. Jeannerot2

1  Laboratoire de Génie Chimique, UMR 5503 du CNRS, ENSIGC, Institut National Polytechnique de Toulouse, 18 chemin de la Loge, 31078 Toulouse cedex, France
2  ATMEL ES2, Zone Industrielle, 13106 Rousset cedex, France

APCVD of boro-phospho silicate glass from mixtures of TEOS, TMB and TMPi has been analysed then modelled in a continuous reactor. A reduced chemical mechanism has been developed and the corresponding rate constants have been identified. The first results obtained are encouraging and suggest that the very simple gas phase chernistry selected could be precise enough to represent the main trends of this very complex deposition procedure.

© EDP Sciences 2001