Prediction of LPCVD silicon film structure using combined experimental and numerical analyses p. Pr2-1 A. Dollet and B. Caussat DOI: https://doi.org/10.1051/jp4:2000201 AbstractPDF (640.8 KB)
Interaction between a reactive preform and the surrounding gas-phase during CVI p. Pr2-9 G.L. Vignoles, C. Descamps and N. Reuge DOI: https://doi.org/10.1051/jp4:2000202 AbstractPDF (607.3 KB)
Formation and deposition of MoS2-nanoparticles p. Pr2-19 H. Keune, W. Lacom, F. Rossi, E. Stoffels, W.W. Stoffels and G. Wahl DOI: https://doi.org/10.1051/jp4:2000203 AbstractPDF (1.544 MB)
Structural properties of epitaxial YSZ and doped CeO2 films on different substrates prepared by liquid sources MOCVD (LSMOCVD) p. Pr2-27 D. Selbmann, M. Krellmann, A. Leonhardt and J. Eickemeyer DOI: https://doi.org/10.1051/jp4:2000204 AbstractPDF (3.400 MB)
Preparation and characterization of some alumosiloxanes as single-source MOCVD precursors for aluminosilicate coatings p. Pr2-35 S.M. Zemskova, J.A. Haynes, T.M. Besmann, R.D. Hunt, D.B. Beach and V.N. Golovlev DOI: https://doi.org/10.1051/jp4:2000205 AbstractPDF (906.2 KB)
In-situ FTIR spectroscopic monitoring of a CVD controlled Si-N-O fibre growth process p. Pr2-43 U. Vogt, A. Vital, W. Graehlert, M. Leparoux, H. Ewing, A. Beil, R. Daum and H. Hopfe DOI: https://doi.org/10.1051/jp4:2000206 AbstractPDF (250.3 KB)
Moderate temperature CVD of Ti-B-C-N on cemented carbide tools : Properties and metal-cutting tests p. Pr2-49 H. Holzschuh DOI: https://doi.org/10.1051/jp4:2000207 AbstractPDF (1.205 MB)
