| Issue |
J. Phys. IV France
Volume 10, Number PR2, February 2000
Proceedings of the Twelfth European Conference on Chemical Vapour DepositionLate News |
|
|---|---|---|
| Page(s) | Pr2-1 - Pr2-8 | |
| DOI | https://doi.org/10.1051/jp4:2000201 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Late News
J. Phys. IV France 10 (2000) Pr2-1-Pr2-8
DOI: 10.1051/jp4:2000201
1 Institut de Science et de Génie des Matériaux et Procédés (IMP), CNRS, BP. 5, Odeillo, 66125 Font-Romeu, France
2 Laboratoire de Génie Chimique (LGC), ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
© EDP Sciences 2000
Late News
J. Phys. IV France 10 (2000) Pr2-1-Pr2-8
DOI: 10.1051/jp4:2000201
Prediction of LPCVD silicon film structure using combined experimental and numerical analyses
A. Dollet1 and B. Caussat21 Institut de Science et de Génie des Matériaux et Procédés (IMP), CNRS, BP. 5, Odeillo, 66125 Font-Romeu, France
2 Laboratoire de Génie Chimique (LGC), ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
Abstract
Experiments and numerical simulations were conducted to predict some structural features of silicon films prepared by Low Pressure Chemical Vapor Deposition. The relationships between the deposition conditions at film-gas interface and the resulting film structure were systematically investigated. A mechanism was proposed to account for the structural changes observed in the films when varying the deposition conditions. A numerical code was then developed which is able to simulate the crystalline structure of the deposited films. A few illustrative simulation examples are given and compared with the corresponding experiments.
© EDP Sciences 2000