Issue
J. Phys. IV France
Volume 10, Number PR2, February 2000
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Late News
Page(s) Pr2-27 - Pr2-33
DOI https://doi.org/10.1051/jp4:2000204
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Late News

J. Phys. IV France 10 (2000) Pr2-27-Pr2-33

DOI: 10.1051/jp4:2000204

Structural properties of epitaxial YSZ and doped CeO2 films on different substrates prepared by liquid sources MOCVD (LSMOCVD)

D. Selbmann, M. Krellmann, A. Leonhardt and J. Eickemeyer

Institut für Festkörper und Werkstofforschung Dresden, Helmholtzstr. 20, 01069 Dresden, Germany


Abstract
With LSMOCVD it is possible to deposit reproducibly oxide films without need for high vacuum systems. On in-plane aligned oxide and metallic substrates epitaxial film growth takes place. Film morphology, interface layers and surface roughness can be controlled by choice of deposition parameters like temperature, gas phase composition and mass flow. The layers were characterized by SEM, AFM and texture analysis. Yttria-stabilized zirconia (YSZ), ceria and ceria doped with Gadolinium are prepared and the dependence of film properties on deposition parameters is investigated. The suitability of these films for the use of buffer layers in YBCO-deposition is discussed.



© EDP Sciences 2000