| Issue |
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-495 - C2-496 | |
| DOI | https://doi.org/10.1051/jp4/1997065 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-495-C2-496
DOI: 10.1051/jp4/1997065
1 Department of Chemistry, University of Western Ontario, London N6A 5B7, Canada
2 Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottmva Kl A 0R6 Canada
3 Brockhouse Institute for Materials Research, McMaster University, Hamilton L8S 4M 1, Canada
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-495-C2-496
DOI: 10.1051/jp4/1997065
Angular Dependent XAFS Studies of a MoSi2 Single Crystal
S.J. Naftel1, T.K. Sham1, V.L. Smelyansky2, J.S. Tse2 and J.D. Garrett31 Department of Chemistry, University of Western Ontario, London N6A 5B7, Canada
2 Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottmva Kl A 0R6 Canada
3 Brockhouse Institute for Materials Research, McMaster University, Hamilton L8S 4M 1, Canada
Abstract
We report angular dependent X-ray absorption measurements at the Mo L3,2 edge and the Si K-edge for a MoSi. single
crystal. The crystal was oriented so that an azimuthal rotation of the crystal about the surface normal (direction of the incident
photons) would align the c-axis of the crystal anywhere between parallel and perpendicular to the polarization of the photons.
It was found that while the Mo L3,2 edge XANES shows little angular dependence, the Si K-edge XANES shows a very strong
polarization dependence of which the intensity exhibits a two-fold symmetry. This angular dependence of the Si K-edge XANES
is attributed to the high densities of unoccupied states localized perpendicular to the Si-Si bond.
© EDP Sciences 1997