| Issue |
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-493 - C2-494 | |
| DOI | https://doi.org/10.1051/jp4/1997064 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-493-C2-494
DOI: 10.1051/jp4/1997064
Department of Chemistry, University of Western Ontario, London N6A 5B7, Ontario, Canada
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-493-C2-494
DOI: 10.1051/jp4/1997064
Si Core Level XANES of Organometallic Compounds Containing Si-Ge Bonds: Experimental and Theoretical Observations
J.Z. Xiong and T.K. ShamDepartment of Chemistry, University of Western Ontario, London N6A 5B7, Ontario, Canada
Abstract
Si K- and L2,3-edge XANES for Si(GeMe3)4 and Ge(SiMe3)4 are studied with the aid of MS-Xα calculation. Good
agreement is found between the experiment and the theory. The lowest energy features are assigned to the transitions to mostly
unoccupied orbitals with significant Si-Ge contribution.
© EDP Sciences 1997