| Issue |
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-497 - C2-498 | |
| DOI | https://doi.org/10.1051/jp4/1997067 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-497-C2-498
DOI: 10.1051/jp4/1997067
1 Department of Chemistry, University of Western Ontario, London N6A 5B7, Canada
2 Brockhouse Institute for Materials Research, McMaster University, Hamilton L8S4M1, Canada
3 Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa K1A 0R6, Canada
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-497-C2-498
DOI: 10.1051/jp4/1997067
XAFS of Early 4-d Transition Metal Suicides: 4-d Metal L3,2Edge and Si K-Edge Studies
I. Coulthard1, T.K. Sham1, J.D. Garrett2, V.L. Smelyansky1 and J.S. Tse31 Department of Chemistry, University of Western Ontario, London N6A 5B7, Canada
2 Brockhouse Institute for Materials Research, McMaster University, Hamilton L8S4M1, Canada
3 Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa K1A 0R6, Canada
Abstract
Charge redistribution upon metal silieide formation in a series of early 4d transition metal silkides; ZrSi2' NbSi2' and MoSi2',
together with the corresponding pure elements has been investigated with XANES at both the metal L3,2-edge and the Si K-edge. ft is
found that the metal L3,2-edge exhibits very intense whitelines characteristic of localized unoccupied densities of states of d character
at the Fermi level and there are substantial differences between the metal and the silicide. The Si K-edge for the silicides also change
markedly compared with pure Si. These results will be discussed in terms of densities of state calculations.
© EDP Sciences 1997