RMPECVD of silica films in large scale microwave plasma reactor : Films properties

F. Naudin; P. Tristant; M.C. Hugon; I. Jauberteau; B. Agius; J. Desmaison

doi:doi:10.1051/jp4:19998104

Numéro		J. Phys. IV France Volume 09, Numéro PR8, September 1999 Proceedings of the Twelfth European Conference on Chemical Vapour Deposition


Page(s)		Pr8-819 - Pr8-826
DOI		https://doi.org/10.1051/jp4:19998104

Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-819-Pr8-826
DOI: 10.1051/jp4:19998104

RMPECVD of silica films in large scale microwave plasma reactor : Films properties

F. Naudin¹, P. Tristant¹, M.C. Hugon², I. Jauberteau¹, B. Agius² and J. Desmaison¹

¹ Laboratoire de Sciences des Procédés Céramiques et Traitements de Surface, ENSIL, Université de Limoges, UMR 6638 du CNRS, 123 avenue A. Thomas, 87060 Limoges cedex, France
² Groupe de Physique des Films Minces, Institut d'Optique, URA 14 du CNRS, BP. 147, 91403 Orsay cedex, France

Abstract
Previous works have described the deposition conditions of silicon oxide by Remote Microwave Plasma Enhanced Chemical Vapor Deposition. In this paper, the size of the quartz tube containing the glow discharge has been changed (=225 instead of 30 mm) and the process parameters (microwave power, pressure, temperature) are correlated with physico-chemical properties of the films. The comparison of the results for the two configurations allows to discuss the influence of the scale of the microwave plasma. The coatings are characterized in terms of density, chemical etch rate, bonding characteristics (FTIR), stoechiometry (NRA) and the microstructures revealed by AFM.