| Issue |
J. Phys. IV France
Volume 04, Number C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-163 - C7-166 | |
| DOI | https://doi.org/10.1051/jp4:1994739 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-163-C7-166
DOI: 10.1051/jp4:1994739
1 Friedrich-Schiller-University Jena, Institute for Optics and Quantum Electronics, Max-Wien Platz I , 07743 Jena, Germany
2 A.F. Ioffe, Physicotechnical Institute of the Academy of Sciences of Russia, Politehnicheskaya 26, 194021 St. Petersburg, Russia
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-163-C7-166
DOI: 10.1051/jp4:1994739
The influence of ion implantation and high energy proton irradiation of semiconductors on a photothermal signal
A. Glazov1, 2 and K. Muratikov1, 21 Friedrich-Schiller-University Jena, Institute for Optics and Quantum Electronics, Max-Wien Platz I , 07743 Jena, Germany
2 A.F. Ioffe, Physicotechnical Institute of the Academy of Sciences of Russia, Politehnicheskaya 26, 194021 St. Petersburg, Russia
Abstract
A photothermal technique with interferometrical detection was applied to obtain amplitude and phase images of ion-implanted and proton-irradiated semiconductors. It was experimentally shown that ion implantation and radiation defects differently affect on the photothermal images of semiconductors by using weakly absorped laser radiation for heating. Oscillations observed by photothermal imaging was explained by interference of the heating light due to internal reflection and should be taken into account for right interpretation of the images.
© EDP Sciences 1994